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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 1/4
HSB857D
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Absolute Maximum Ratings (Ta=25C)
TO-126ML
* Maximum Temperatures Storage Temperature .............................................................................................. -50~+150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C).....................................................................................1.5 W Total Power Dissipation (Tc=25C) ......................................................................................10 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage.......................................................................................-60 V BVCEO Collector to Emitter Voltage................................................................................... -50 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current.............................................................................................................. -3 A IC Collector Current (IC Peak)........................................................................................... -4.5 A
Electrical Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VBE(sat) *hFE fT Min. -60 -50 -5 170 Typ. -0.3 15 Max. -1 -1 -1 -1 -1.5 400 Unit V V V uA uA uA V V MHz Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-50V VCE=-40V VEB=-4V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-500mA, VCE=-3V VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSB857D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000 125 C
o
Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 2/4
Saturation Voltage & Collector Current
1000 VCE(sat) @ IC=10IB
75 C
o
25 C
o
Saturation Voltage (mV)
hFE
100
100
75 C
o
hFE @ VCE=3V
125 C
o
25 C
o
10 1 10 100 1000 10000
10 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VBE(sat) @ IC=10IB
Capacitance & Reverse-Biased Voltage
1000
Saturation Voltage (mV)
75 C 1000 25 C
o
o
Capacitance (pF)
100 Cob
125 C
o
100 1 10 100 1000 10000
10 1 10 100
Collector Current-IC (mA)
Reverse Biased Voltage (V)
Safe Operating Area
10 PT=1ms
PD - Ta
1.6 1.4
PD(W) , Power Dissipation
Collector Current-IC (A)
1.2 1 0.8 0.6 0.4 0.2
1
PT=100ms PT=1s
0.1 1 10 100 1000
0 0 50 100
o
150
200
Forward Voltage-VCE (V)
Ambient Temperature-Ta ( C )
HSB857D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 3/4
PD - Tc
12
10
PD(W), Power Dissipation
8
6
4
2
0 0 50 100
o
150
200
Ambient Temperature-Tc ( C)
HSB857D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking:
Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 4/4
A
H
SB
B D E F 3 2 I G 1 J M L K O H
Date Code
857D Control Code
Ink Marking
C
Style: Pin 1.Emitter 2.Collector 3.Base
N
3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical
DIM A B C D E F G H
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
DIM I J K L M N O
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1. Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2. Controlling dimension: millimeters. 3. Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4. If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F., No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB857D
HSMC Product Specification

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